Gate-tunable quantum anomalous Hall effects in MnBi2Te4 thin films
نویسندگان
چکیده
منابع مشابه
Enhanced anomalous Hall effect in Fe nanocluster assembled thin films.
An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160-1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10(-8) Ω cm G(-1) at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivit...
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ژورنال
عنوان ژورنال: Physical Review Materials
سال: 2021
ISSN: 2475-9953
DOI: 10.1103/physrevmaterials.5.l051201